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| October 2003 FDFS6N303 N-Channel MOSFET with Schottky Diode General Description The FDFS6N303 incorporates a high cell density MOSFET and low forward drop (0.35V) Schottky diode into a single surface mount power package. The MOSFET and Schottky diode are isolated inside the package. The general purpose pinout has been chosen to maximize flexibility and ease of use. This product is particularly suited for switching applications such as DC/DC buck, boost, synchronous, and non-synchronous converters where the MOSFET is driven as low as 4.5V and fast switching, high efficiency and small PCB footprint is desirable. Features 6 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 V. R DS(ON) = 0.055 @ VGS = 4.5 V. VF < 0.28 V @ 0.1 A VF < 0.42 V @ 3 A VF < 0.50 V @ 6 A. Schottky and MOSFET incorporated into single power surface mount SO-8 package. General purpose pinout for design flexibility. Ideal for DC/DC converter applications. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D C C D A A S 1 2 3 4 8 7 6 5 C C D D FS FD 303 6N G A S G SO-8 pin 1 A MOSFET Maximum Ratings Symbol Parameter TA = 25oC unless otherwise noted FDFS6N303 Units VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1c) (Note 1a) 30 20 6 30 2 1.6 0.9 -55 to 150 V V A W TJ,TSTG Operating and Storage Temperature Range TA = 25oC unless otherwise noted C Schottky Diode Maximum Ratings VRRM IO Repetitive Peak Reverse Voltage Average Forward Current 30 (Note 1a) V A 2 (c) 2003 Fairchild Semiconductor Corporation FDFS6N303 Rev. D3 Electrical Characteristics Symbol Parameter (TA = 25 oC unless otherwise noted ) Conditions Min Typ Max Units MOSFET ELECTRICAL CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) gFS ID(ON) Ciss Coss Crss Qg tD(on) tr tD(off) tf IS VSD BV IR VF Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, I D = 250 A VDS = 24 V, VGS = 0 V TJ =125C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = 250 A VGS = 10 V, I D = 6 A VGS = 4.5 V, I D = 4.8 A VDS = 10 V, ID = 6 A VGS = 10 V, VDS = 5 V VDS = 15 V, VGS = 0 V, f = 1.0 MHz VDS = 15 V, ID = 6 A, VGS = 10 V VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 30 1 20 100 -100 1 1.7 0.025 0.043 12 15 350 220 80 12 7.5 12 13 6 17 15 25 25 15 1.3 (Note 2) V A A nA nA V Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance On-State Drain Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time 3 0.035 0.055 S A pF pF pF nC ns ns ns ns A V V MOSFET DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Breakdown Voltage Reverse Leakage Forward Voltage VGS = 0 V, I S = 1.3 A IR = 1 mA VR = 30 V IF = 0.1 A IF = 3 A IF = 6 A 0.8 30 1.2 SCHOTTKY DIODE CHARACTERISTICS 0.5 280 420 500 78 40 mA mV THERMAL CHARACTERISTICS RJA RJC Notes: Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) C/W C/W 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a. 78OC/W on a 0.5 in2 pad of 2oz copper. b. 125OC/W on a 0.02 in2 pad of 2oz copper. c. 135OC/W on a 0.003 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. FDFS6N303 Rev. D3 Typical Electrical Characteristics 30 ID , DRAIN-SOURCE CURRENT (A) 25 20 15 6.0V 5.0V R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS= 10V 3 2.5 4.5V VGS = 4.0V 2 4.5V 1.5 4.0V 10 5.0V 6.0V 7.0V 10V 3.5V 5 1 3.0V 0 0.5 0 1 2 3 4 0 5 10 15 20 25 30 V DS , DRAIN-SOURCE VOLTAGE (V) I D , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.1 R DS(ON) , ON-RESISTANCE (OHM) 1.6 DRAIN-SOURCE ON-RESISTANCE ID = 6A VGS = 10V I D = 3A 0.075 R DS(ON) , NORMALIZED 1.4 1.2 0.05 TA = 125C 1 0.025 25C 0.8 0.6 -50 0 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) 2 4 6 8 10 V GS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 30 25 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 30 TA = -55C 25C 125C I S , REVERSE DRAIN CURRENT (A) VDS = 5V 10 VGS = 0V I D , DRAIN CURRENT (A) 1 20 15 10 5 0 TA = 125C 25C -55C 0.1 0.01 0.001 0.0001 1 2 3 4 5 6 7 VGS , GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDFS6N303 Rev. D3 Typical 10 V GS , GATE-SOURCE VOLTAGE (V) Fet And Schottky Electrical Characteristics 1000 I D = 6.0A V DS = 5V 8 10V 6 CAPACITANCE (pF) 500 Ciss Coss 15V 200 4 2 100 f = 1 MHz VGS = 0V 0.3 1 3 Crss 0 0 2 4 6 8 10 12 14 Q g , GATE CHARGE (nC) 50 0.1 10 30 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 10 I F , FORWARD CURRENT (A) 1 IR , REVERSE CURRENT (A) 0.1 TJ = 125C TJ = 125C 1 0.01 25C 0.001 0.0001 25C 0.1 0 0.1 0.2 0.3 0.4 V F , FORWARD VOLTAGE (V) 0.5 0.6 0.00001 0 5 10 15 20 VR , REVERSE VOLTAGE (V) 25 30 Figure 9. Schottky Diode Forward Voltage. Figure 10. Schottky Diode Reverse Current. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk) R JA (t) = r(t) * R JA R JA =135 C/W t1 t2 TJ - TA = P * RJA (t) Duty Cycle, D = t1 /t2 100 300 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. FDFS6N303 Rev. D3 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM TM EnSigna ImpliedDisconnectTM FACTTM ISOPLANARTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5 |
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